How InAs crystal phase affects the electrical performance of InAs nanowire FETs

Author

Ullah, A.R. ; Joyce, H.J. ; Burke, A.M. ; Wong-Leung, J. ; Tan, H.H. ; Jagadish, C. ; Micolich, A.P.

Author_Institution

Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

283

Lastpage

285

Abstract

We have studied the electronic transport characteristics of nanowire field effect transistors (NWFETs) made from phase-pure wurtzite (WZ) and zinc blende (ZB) InAs nanowires (NWs). The electronic characteristics were obtained at temperatures between 4 and 300 K. The ZB NWFETs exhibited a greater sensitivity to the surrounding atmosphere than WZ NWFETs. The WZ NWFETs had a higher mobility than ZB NWFETs at a given temperature. We also found that WZ NWs had a higher carrier density than ZB NWs at most temperatures, presumably due to differences in carbon incorporation during growth.

Keywords

III-V semiconductors; carrier density; field effect transistors; indium compounds; nanowires; InAs; carrier density; crystal phase; electrical performance; nanowire FET; nanowire field effect transistors; phase pure wurtzite; sensitivity; temperature 4 K to 300 K; zinc blende nanowires; Crystals; Field effect transistors; Impurities; Nanoscale devices; Scattering; Temperature measurement; Zinc; InAs; nanowire FETs; wurtzite; zinc blende;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038712

Filename

7038712