Title :
Transverse-mode stabilised 630 nm-band AlGaInP strained multiquantum-well laser diodes grown on misoriented substrates
Author :
Honda, Shogo ; Hamada, Hiroyuki ; Shono, M. ; Hyroyama, R. ; Yodoshi, K.
Author_Institution :
Sanyo Electr. Co. Ltd., Osaka, Japan
fDate :
7/2/1992 12:00:00 AM
Abstract :
Transverse-mode stabilised AlGaInP ( lambda L=638 nm) compressively strained multiquantum-well laser diodes have been successfully fabricated by MOCVD using
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; indium compounds; laser frequency stability; laser modes; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 3 mW; 40 degC; 60 degC; 638 nm; AlGaInP-GaAs; CW operation temperature; GaAs; III-V semiconductors; MOCVD; degradation; misorientation; misoriented substrates; strained multiquantum-well laser diodes; transverse mode stabilised;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920868
