Title :
Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning
Author :
Yun, Jang-Gn ; Kim, Yoon ; Park, Il Han ; Lee, Jung Hoon ; Kang, Daewoong ; Lee, Myoungrack ; Shin, Hyungcheol ; Lee, Jong Duk ; Park, Byung-Gook
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
Fin silicon-oxide-nitride-oxide-semiconductor (SONOS) flash memories having independent double gates are fabricated and characterized. This device has two sidewall gates sharing one Si fin. To achieve narrow Si fin width over the photolithography limitation, sidewall spacer patterning is adopted. Specific fabrication processes for the fin SONOS flash memory having independent double gates are described. Electrical properties related to the opposite gate dependence are characterized. Measurement results of the paired cell interference are delivered.
Keywords :
electric properties; flash memories; logic gates; photolithography; electrical properties; fabrication processes; fin silicon-oxide-nitride-oxide-semiconductor flash memories; independent double gates; photolithography; sidewall gates; sidewall spacer patterning; Companies; Computer science; Fabrication; Flash memory; High K dielectric materials; Interference; Lithography; Nonvolatile memory; SONOS devices; Student members; Fin silicon–oxide–nitride–oxide–semiconductor (SONOS) Flash memory; interference coupling; paired cell interference (PCI); separated double gates; sidewall spacer patterning;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2024228
