DocumentCode :
1133732
Title :
Physical timing modeling for bipolar VLSI
Author :
Yang, Andrew T. ; Chang, Yu-Hsu
Author_Institution :
Dept. of Electr. Eng., Washington, Univ., Seattle, WA, USA
Volume :
27
Issue :
9
fYear :
1992
fDate :
9/1/1992 12:00:00 AM
Firstpage :
1245
Lastpage :
1254
Abstract :
An approach for the analytical timing modeling of bipolar VLSI circuits that is based on average branch current analysis and the parametric correction scheme is presented. The combination of these techniques permits complex delay-sensitive effects of bipolar digital circuits to be incorporated in the derivation of the bipolar delay models. The delay functions of two basic bipolar subcircuit configurations (the series-gated structure and the emitter follower) are derived using the proposed techniques. It is shown that accurate timing information for the high-speed bipolar digital circuit, such as ECL, CML, and BiCMOS, can be obtained by repeated processing of these subcircuit delay functions. The delay estimates obtained with these timing models have been shown to be accurate typically within 10% of SPICE estimates. Applications include switch-level timing simulation, timing analysis and verification cell optimization, and technology mapping
Keywords :
VLSI; bipolar integrated circuits; delays; digital integrated circuits; integrated logic circuits; semiconductor device models; SPICE estimates; VLSI circuits; average branch current analysis; bipolar VLSI; bipolar delay models; bipolar digital circuits; cell optimization; complex delay-sensitive effects; emitter follower; parametric correction scheme; series-gated structure; subcircuit delay functions; switch-level; technology mapping; timing analysis; timing simulation; timing verification, high speed circuits; Analytical models; BiCMOS integrated circuits; Bipolar transistor circuits; Delay effects; Delay estimation; Digital circuits; MOSFET circuits; Propagation delay; Timing; Very large scale integration;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.149428
Filename :
149428
Link To Document :
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