1.5-µm λ/4-shifted InGaAsP/InP DFB lasers

Author

Akiba, Shigeyuki ; Usami, Masashi ; Utaka, Katsuyuki

Author_Institution

Kosukai Denshin Denwa Co. Ltd., Meguro-ku, Tokyo, Japan

Volume

5

Issue

11

fYear

1987

fDate

11/1/1987 12:00:00 AM

Firstpage

1564

Lastpage

1573

Abstract

A single wavelength light source in 1.5-μm range was developed using InGaAsP/InP $\\lambda /4$ -shifted distributed feedback (DFB) semiconductor heterostructures. Superiority of the $\\lambda /4$ -shifted DFB structure in terms of stability of the main mode at the Bragg wavelength was shown theoretically, in which the threshold, the output, and the polarization characteristics were taken into account. A $\\lambda /4$ -shifted corrugated grating was made by a newly developed negative and positive photoresists technique. Buried heterostructure (BH) diode lasers with nonreflective window ends were fabricated and highly stable single-mode operation with a low threshold was obtained reproducibly. Direct modulation properties and life-tests results indicated that the $\\lambda /4$ -shifted DFB lasers could be a reliable single-mode light source in a long span lightwave transmission system in 1.5-μm range.

Keywords

Distributed feedback (DFB) lasers; Gallium materials/lasers; Optical fiber transmitters, lasers; Distributed feedback devices; Gratings; Indium phosphide; Laser feedback; Laser modes; Light sources; Polarization; Resists; Semiconductor lasers; Stability;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.1987.1075453

Filename

1075453