DocumentCode
1134
Title
3-T ISFET front-end utilising parasitic device capacitance
Author
Yuanqi Hu ; Georgiou, Pantelis
Author_Institution
Inst. of Biomed. Eng., Imperial Coll. London, London, UK
Volume
50
Issue
21
fYear
2014
fDate
October 9 2014
Firstpage
1507
Lastpage
1509
Abstract
A 3-T ion sensitive field effect transistor (ISFET) chemical sensor that utilises the parasitic drain-gate capacitance of the device is proposed. It is compact and consumes extremely low power, and at the same time is immune to capacitive division. Additionally, it provides in-pixel amplification dependent on the ratio of passivation and feedback (parasitic) capacitance. The fabricated sensor achieves 200 mV/pH sensitivity using this amplification mechanism.
Keywords
chemical sensors; ion sensitive field effect transistors; 3T ISFET front-end; amplification mechanism; chemical sensor; feedback capacitance; in-pixel amplification; ion sensitive field effect transistor; parasitic device capacitance; parasitic drain-gate capacitance; passivation ratio;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.2488
Filename
6926961
Link To Document