DocumentCode :
1134040
Title :
1580-V–40- 
Double-RESURF MOSFETs on 4H-SiC  MOSFETs with N<sub>2</sub>O-grown oxides have been fabricated on the 4H-SiC (0001macr) face. The double-RESURF structure is effective in reducing the drift resistance, as well as in increasing the breakdown voltage. In addition, by utilizing the 4H-SiC (0001macr) face, the channel mobility can be increased to over 30 cm<sup>2</sup> / V ldr s, and hence, the channel resistance is decreased. As a result, the fabricated MOSFETs on 4H-SiC (0001macr) have demonstrated a high breakdown voltage (V<sub>B</sub>) of 1580 V and a low on-resistance (R<sub>ON</sub>) of 40 mOmega ldr cm<sup>2</sup>. The figure-of-merit (V<sub>B</sub> <sup>2</sup>/R<sub>ON</sub>) of the fabricated device has reached 62 MW/cm<sup>2</sup>, which is the highest value among any lateral MOSFETs and is more than ten times higher than the )
Keywords :
MOSFET; semiconductor device breakdown; SiC; breakdown voltage; channel mobility; channel resistance; double-RESURF MOSFET; double-RESURF structure; double-reduced-surface-field MOSFET; drift resistance; voltage 1580 V; Breakdown voltage; MOSFET; on-resistance; reduced surface field (RESURF); silicon carbide (SiC);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2023540
Filename :
5164965
Link To Document :
