DocumentCode
1134181
Title
Suppression of interface degradation in InGaAsP inP buried heterostructure lasers
Author
Fukuda, Mitsuo ; Noguchi, Yoshio ; Motosugi, George ; Nakano, Yoshinori ; Tsuzuki, Nobuyori ; Fujita, Osamu
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
Volume
5
Issue
12
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
1778
Lastpage
1781
Abstract
In InGaAsP/InP buried heterostructure (BH) lasers, the degradation of BH interface between first- and second-growth step layers can be suppressed by employing the melt back process just before the second-step layer growth. It is confirmed this burying process give more reliable BH lasers than the conventional burying process. From the viewpoint of BH interface degradation, lasers lasing at 1.5 μm, where the melt back process naturally occurs during BH formation, are found to be more reliable than those lasing at 1.3 μm.
Keywords
Gallium materials/lasers; Aging; Charge carrier lifetime; Chemical lasers; Degradation; Epitaxial growth; Etching; Indium phosphide; Laser modes; Laser transitions; Radiative recombination;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.1987.1075475
Filename
1075475
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