P-I-N photodiodes for optical control of microwave circuits

Author

Malyshev, Sergei A. ; Chizh, Alexander L.

Author_Institution

Lab. of Semicond. Optoelectronics, Nat. Acad. of Sci. of Belarus, Minsk, Belarus

Volume

10

Issue

4

fYear

2004

Firstpage

679

Lastpage

685

Abstract

The full-device model of the p-i-n photodiode based on a harmonic balance method and drift-diffusion description of charge carrier transport in semiconductor heterostructure in time domain, taking into account external equivalent circuit, is developed. Computer simulation of p-n junction capacitance and resistance under different optical powers in the frequency range up to 60 GHz and zero bias voltage is presented. The influence of such photodiode design parameters as thickness, concentration, absorption coefficient, and charge carriers´ life time of the absorption layer on the p-n junction capacitance ratio under different control optical powers is studied.

Keywords

carrier lifetime; microwave circuits; microwave photonics; optical control; p-i-n photodiodes; p-n junctions; charge carrier lifetime; charge carrier transport; drift-diffusion modeling; external equivalent circuit; microwave circuits; optical control; p-i-n photodiodes; p-n junction capacitance; photodiode design parameters; semiconductor heterostructure; Absorption; Capacitance; Charge carriers; Computer simulation; Equivalent circuits; Frequency; Microwave circuits; Optical control; P-n junctions; PIN photodiodes; Drift-diffusion modeling; harmonic balance; optical control; p-i-n photodiode;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2004.831949

Filename

1343953