High-performance 5.5 μm quantum cascade lasers with high-reflection coating

Author

Scarpa, G. ; Ulbrich, N. ; Rosskopf, J. ; Sigl, A. ; Bohm, G. ; Abstreiter, G. ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

Volume

149

Issue

56

fYear

2002

Firstpage

201

Lastpage

205

Abstract

A high-reflection coating for 5.5 μm strain-compensated InGaAs/InAlAs quantum cascade lasers is described. Using a high-reflection coating on both facets of a laser cavity, a threshold current density of 0.5 kA/cm² was observed at liquid-nitrogen temperature, whereas for an uncoated structure of comparable length the threshold current density was 1 kA/cm². Laser action for a 2.1 mm long and 30 μm wide device with coated facets was achieved in pulsed mode up to the record high temperature of 470 K. A 2.5 mm long and 30 μm wide device with uncoated facets shows lasing action up to 440 K.

Keywords

III-V semiconductors; compensation; cryogenics; current density; gallium arsenide; indium compounds; infrared sources; laser transitions; optical films; quantum cascade lasers; 2.1 mm; 2.5 mm; 30 micron; 440 K; 470 K; 5.5 μm quantum cascade lasers; 5.5 μm strain-compensated InGaAs/InAlAs quantum cascade lasers; 5.5 micron; InGaAs-InAlAs; coated facets; comparable length; high temperature; high-reflection coating; laser cavity facets; lasing action; liquid-nitrogen temperature; pulsed mode; threshold current density; uncoated structure;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20020610

Filename

1176181