• DocumentCode
    1134551
  • Title

    High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes

  • Author

    Ito, Hiroshi ; Kodama, Satoshi ; Muramoto, Yoshifumi ; Furuta, Tomofumi ; Nagatsuma, Tadao ; Ishibashi, Tadao

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Kanagawa, Japan
  • Volume
    10
  • Issue
    4
  • fYear
    2004
  • Firstpage
    709
  • Lastpage
    727
  • Abstract
    The unitraveling-carrier photodiode (UTC-PD) is a novel photodiode that utilizes only electrons as the active carriers. This unique feature is the key for its ability to achieve excellent high-speed and high-output characteristics simultaneously. To date, a record 3-dB bandwidth of 310 GHz and a millimeter-wave output power of over 20 mW at 100 GHz have been achieved. The superior capability of the UTC-PD for generating very large high-bit-rate electrical signals as well as a very high RF output power in millimeter/submillimeter ranges can lead to innovations in various systems, such as broadband optical communications systems, wireless communications systems, and high-frequency measurement systems. Accomplishments include photoreceivers of up to 160 Gb/s, error-free DEMUX operations using an integrated UTC-PD driven optical gate of up to 320 Gb/s, a 10-Gb/s millimeter-wave wireless link at 120 GHz, submillimeter-wave generation at frequencies of up to 1.5 THz, and photonic frequency conversion with an efficiency of -8 dB at 60 GHz. For the practical use, various types of modules, such as a 1-mm coaxial connector module, a rectangular-waveguide output module, and a quasi-optic module, have been developed. The superior reliability and stability are also confirmed demonstrating usefulness of the UTC-PD for the system applications.
  • Keywords
    III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; microwave photonics; millimetre wave generation; millimetre wave receivers; photodiodes; submillimetre wave generation; waveguide components; 10 Gbit/s; 100 GHz; 120 GHz; 160 Gbit/s; 20 mW; 310 GHz; 320 Gbit/s; 60 GHz; InP-InGaAs; InP-InGaAs photodiodes; broadband optical communications; coaxial connector module; error-free DEMUX operations; high-bit-rate electrical signals; high-frequency measurement systems; high-output photodiodes; high-speed photodiodes; integrated UTC-PD; millimeter-wave output; millimeter-wave wireless link; optical gate; photonic frequency conversion; photoreceivers; quasioptic module; rectangular-waveguide output module; reliability; stability; submillimeter-wave generation; unitraveling-carrier photodiodes; wireless communications systems; Bandwidth; Broadband communication; Electrons; Frequency conversion; Photodiodes; Power generation; RF signals; Radio frequency; Signal generators; Technological innovation; High-frequency measurements; InP–InGaAs; UTC-PD; high power; high speed; millimeter wave; optical gate; photodiode; unitraveling-carrier photodiode; wireless link;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2004.833883
  • Filename
    1343957