Title :
2
2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-
m Applic
Author :
Zegaoui, Malek ; Choueib, Nargess ; Harari, Joseph ; Decoster, Didier ; Magnin, Vincent ; Wallart, Xavier ; Chazelas, Jean
Author_Institution :
Inst. d´´Electron. de Microelectron. et de Nanotechnol. (IEMN), USTL, Villeneuve d´´Ascq, France
Abstract :
This letter demonstrates a 2times2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive integrated optical circuit with an optimized X-crossing. The passive structure was designed using a two-dimensional beam propagation method (BPM) and the entire InP-InGaAsP-InP DOS was designed using a semivectorial three-dimensional BPM. The fabricated 2times2 InP switching matrix heterostructure with lambdag=1.3 mum exhibits optical crosstalk as low as -30.5 dB for drive current of 52 mA at 1.55-mum wavelength. Maximum crosstalk change of 4 dB is measured under optical polarization variation.
Keywords :
gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; optical crosstalk; optical switches; InP; InP-InGaAsP-InP; carrier-induced effect; current 52 mA; digital optical switch; integrated optical circuit; optical crosstalk; optical switching matrix; two-dimensional beam propagation method; wavelength 1.3 mum; wavelength 1.55 mum; Adiabatic transitions; InP–InGaAsP–InP waveguides; carrier-induced effects; digital optical switch (DOS); low crosstalk; optical switching matrix;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2026484