10-Gb/s Direct Modulation up to 100 $^{\\circ}$ C Using 1.3- $\\mu$ m-Range Metamorphically Grown Stra

Author

Arai, Masakazu ; Tadokoro, Takashi ; Fujisawa, Takeshi ; Kobayashi, Wataru ; Nakashima, Kiichi ; Yuda, Masahiro ; Kondo, Yasuhiro

Author_Institution

Photonics Labs., NTT Corp., Atsugi, Japan

Volume

21

Issue

18

fYear

2009

Firstpage

1344

Lastpage

1346

Abstract

We have realized 10-Gb/s direct modulation up to 100degC using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mum-range lasing and an increased number of QWs (six). This laser with a 200-mum-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies of 13 and 6 GHz at 25degC and 100degC, respectively. A 10-km single-mode fiber error-free transmission was successfully obtained at a temperature of 85degC .

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; InGaAs-GaAs; barrier layer; metamorphic multiple-qunatum well laser; relaxation oscillation frequencies; single-mode fiber error-free transmission; temperature 100 degC; temperature 25 degC; wavelength 1.3 micron; Direct modulation; heteroepitaxy; metamorphic growth; quasi-InGaAs substrate; uncooled laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2026488

Filename

5165056

10-Gb/s Direct Modulation up to 100 C Using 1.3- m-Range Metamorphically Grown Stra

Arai, Masakazu ; Tadokoro, Takashi ; Fujisawa, Takeshi ; Kobayashi, Wataru ; Nakashima, Kiichi ; Yuda, Masahiro ; Kondo, Yasuhiro

jour

10-Gb/s Direct Modulation up to 100 $^{\\circ}$ C Using 1.3- $\\mu$ m-Range Metamorphically Grown Stra