DocumentCode :
1135059
Title :
10-Gb/s Direct Modulation up to 100 
C Using 1.3- 
m-Range Metamorphically Grown Stra
Author :
Arai, Masakazu ; Tadokoro, Takashi ; Fujisawa, Takeshi ; Kobayashi, Wataru ; Nakashima, Kiichi ; Yuda, Masahiro ; Kondo, Yasuhiro
Author_Institution :
Photonics Labs., NTT Corp., Atsugi, Japan
Volume :
21
Issue :
18
fYear :
2009
Firstpage :
1344
Lastpage :
1346
Abstract :
We have realized 10-Gb/s direct modulation up to 100degC using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mum-range lasing and an increased number of QWs (six). This laser with a 200-mum-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies of 13 and 6 GHz at 25degC and 100degC, respectively. A 10-km single-mode fiber error-free transmission was successfully obtained at a temperature of 85degC .
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; InGaAs-GaAs; barrier layer; metamorphic multiple-qunatum well laser; relaxation oscillation frequencies; single-mode fiber error-free transmission; temperature 100 degC; temperature 25 degC; wavelength 1.3 micron; Direct modulation; heteroepitaxy; metamorphic growth; quasi-InGaAs substrate; uncooled laser;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2026488
Filename :
5165056
Link To Document :
