Title :
Low-Frequency Noise Partition of Asymmetric MOS Transistors Operating in Linear Regime
Author :
Marinov, Ognian ; Deen, M. Jamal
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada
Abstract :
The low-frequency noise in asymmetric MOS transistors with graded channel doping from the source to the drain can be partitioned by assuming a series connection of two or more transistors along the device´s channel length. The partition explains the noise overshoot at gate biases around the threshold voltage of the composite device. Expressions for the input-referred gate noise voltage are obtained and verified.
Keywords :
MOSFET; semiconductor device noise; semiconductor doping; asymmetric MOS transistor; graded channel doping; input-referred gate noise voltage; low-frequency noise partition; threshold voltage; $1/f$ noise; Flicker noise; low-frequency noise (LFN) in asymmetric MOS transistors; partition of nonuniform field-effect devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2023382
