DocumentCode
1135563
Title
CW Lasing at 1.35 
m From Ten InAs–Sb : GaAs Quantum-Dot Layers Grown by Metal–Organic Chemical Vapor Deposition
Author
Guimard, D. ; Ishida, M. ; Hatori, N. ; Nakata, Y. ; Sudo, H. ; Yamamoto, T. ; Sugawara, M. ; Arakawa, Y.
Author_Institution
Univ. of Tokyo, Tokyo
Volume
20
Issue
10
fYear
2008
fDate
5/15/2008 12:00:00 AM
Firstpage
827
Lastpage
829
Abstract
We report the fabrication of GaAs-based quantum-dot (QD) lasers grown by metal-organic chemical vapor deposition (MOCVD) above 1.3 m. We fabricated a laser diode with ten stacked InAs-Sb:GaAs(100) QD layers, grown by antimony-surfactant-mediated growth. Ground-state lasing was obtained under continuous-wave operation at room temperature at 1.35 mum, with a maximum ground state modal gain of 19.3 cm-1. These values are the highest values reported for MOCVD-grown GaAs-based QD laser.
Keywords
III-V semiconductors; MOCVD; antimony; gallium arsenide; ground states; indium compounds; laser modes; quantum dot lasers; semiconductor growth; semiconductor quantum dots; CW lasing; GaAs(100) layer; InAs-GaAs:Sb; MOCVD; antimony surfactant; continuous-wave lasing; ground state modal gain; laser diode; metal-organic chemical vapor deposition; quantum dot laser; semiconductor quantum-dot layers; temperature 293 K to 298 K; wavelength 1.3 mum; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Land surface temperature; Laser theory; MOCVD; Optical device fabrication; Quantum dot lasers; Quantum dots; Stationary state; Antimony; metal–organic chemical vapor deposition (MOCVD); quantum dots (QDs); semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2008.921831
Filename
4492814
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