High-power angled broad-area 1.3-μm laser diodes with good beam quality

Author

Chih-Hung Tsai ; Su, Yi-Shin ; Chia-Wei Tsai ; Tsai, Chih-Hung ; Lin, Ching-Fuh

Author_Institution

Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan

Volume

16

Issue

11

fYear

2004

Firstpage

2412

Lastpage

2414

Abstract

A new type of high-power laser diodes is fabricated with a broad-area waveguide tilted at 7° from the facet normal. For the current between 0.6 and 1.2 A, it behaves like a superluminescent diode with 40-nm spectral width and 40-mW output power. The far field emits at about 25° away from the facet normal. For the current above 1.2 A, it oscillates with a narrow spectrum. The far field emits along the facet normal with its angle only twice of the diffraction limit. The output power per facet could be 1 W at 12 A.

Keywords

diffraction gratings; distributed feedback lasers; laser beams; optical fabrication; photoluminescence; semiconductor lasers; spectral line breadth; waveguide lasers; 0.6 to 1.2 A; 1 W; 1.3 mum; 12 A; 40 mW; angled broad-area laser diodes; angled-grating DFB laser; beam quality; diffraction limit; distributed feedback laser; facet normal; far field emission; high-power laser diodes; laser fabrication; superluminescent diode; Diode lasers; Distributed feedback devices; Laser beams; Laser feedback; Masers; Optical waveguides; Power generation; Power lasers; Semiconductor lasers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.834890

Filename

1344051