Further Enhancement of Nitride-Based Near-Ultraviolet Vertical-Injection Light-Emitting Diodes by Adopting a Roughened Mesh-Surface

Author

Lee, Chia-En ; Lee, Yea-Chen ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Wang, Shing-Chung

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

Volume

20

Issue

10

fYear

2008

fDate

5/15/2008 12:00:00 AM

Firstpage

803

Lastpage

805

Abstract

In this letter, the nitride-based near-ultraviolet (NUV) vertical-injection light-emitting diodes (VLEDs) with roughened mesh-surface are proposed and demonstrated by a combination of pattern sapphire substrate, wafer bonding, laser lift-off, and chemical wet etching processes. With the help of adopting a roughened mesh-surface, the light-output power (at 350 mA) of the NUV-VLEDs could be further enhanced about 20% as compared with that of the conventional NUV-VLED.

Keywords

laser beam etching; light emitting diodes; nitrogen compounds; sapphire; surface roughness; chemical wet etching; laser lift off; light emitting diodes; nitride based near ultraviolet vertical injection; pattern sapphire substrate; roughened mesh surface; wafer bonding; Chemical lasers; Dry etching; Gallium nitride; Light emitting diodes; Optical scattering; Rough surfaces; Scanning electron microscopy; Substrates; Surface roughness; Wafer bonding; Laser lift-off (LLO); roughened mesh-surface; vertical-injection light-emitting diodes (VLEDs); wafer bonding;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.921129

Filename

4492818