Title :
Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime
Author :
Salhi, A. ; Rouillard, Y. ; Angellier, J. ; Garcia, M.
Author_Institution :
CEM2, Univ. Montpellier II, France
Abstract :
A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm/sup -1/ and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm2. The threshold current density per quantum well is as low as 34 A/cm2 for a 3-mm-long cavity.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; optical losses; quantum well lasers; ridge waveguides; waveguide lasers; 100 mum; 2.4 mum; 3 mm; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb laser diodes; continuous-wave regime; internal losses coefficient; laser fabrication; laser testing; molecular-beam epitaxy; optical activity; pulsed regime; ridge-waveguide lasers; room temperature; shallow mesa lasers; triple-quantum-well structure; very-low threshold laser diodes; Diode lasers; Gas lasers; Molecular beam epitaxial growth; Optical losses; Optical waveguides; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.835623
