DocumentCode :
1135808
Title :
Novel single quantum well optoelectronic devices based on exciton bleaching
Author :
Abeles, Joseph H. ; Kastalsky, Alexander ; Leheny, R.F.
Author_Institution :
Bell Communications Res., Murray Hill, NJ, USA
Volume :
5
Issue :
9
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
1296
Lastpage :
1300
Abstract :
Novel planar high-speed optoelectronic devices offering advantages for optoelectronic integration are proposed. Exciton-resonant light propagates along a single-mode rib waveguide containing a single quantum well (SQW), the only absorbing medium in the waveguide. The two-dimensional (2D) excitonic optical absorption is controlled by the bleaching effect induced by free carriers, whose electrical conduction simultaneously makes possible optical detection and high-speed transistor action. Three such optical modulating devices are: 1) a gate-controlled single quantum well field-effect transistor (FET) optical modulator (FETOM), 2) an optically-readable memory element, and 3) an optically-switched charge storage device. The FETOM, in which the free-carrier density in the SQW is controlled by the gate voltage, offers high speed (22 ps), small size (125 μm), and unique potential for optoelectronic integration.
Keywords :
Electrooptic modulation; FETs (field-effect transistors); Integrated optoelectronics; Optical modulation/demodulation; Optical propagation in absorbing media; Quantum-well device; Bleaching; Excitons; FETs; High speed optical techniques; Optical control; Optical devices; Optical modulation; Optical propagation; Optical waveguides; Optoelectronic devices;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1987.1075633
Filename :
1075633
Link To Document :
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