Title :
1 mW CMOS polyphase channel filter for Bluetooth
Author :
Hughes, J.B. ; Spencer, A. ; Worapishet, A. ; Sitdhikorn, R.
Author_Institution :
Philips Res. Lab., Redhill, UK
Abstract :
A polyphase transconductor-capacitor (Gm-C) channel filter for a low-IF Bluetooth transceiver is described. It is designed in a 2.5 V, 0.25 μm standard CMOS process and employs a novel fully differential transconductor. Simulated performance is presented showing good fifth-order bandpass filter response (1 MHz centre frequency, 1.2 MHz bandwidth), 1 dB compression at 1.3 V pk-pk, signal-to-noise ratio of 68.2 dB and an input third-order intermodulation product of 34.2 dBV. The power consumption is 1 mW and estimated chip area is 0.1 mm2.
Keywords :
Bluetooth; CMOS integrated circuits; active filters; band-pass filters; transceivers; 0.25 micron; 1 MHz; 1 mW; 1.2 MHz; 2.5 V; CMOS polyphase transconductor-capacitor channel filter; bandpass filter; chip area; fully differential transconductor; input third-order intermodulation product; low-IF Bluetooth transceiver; power consumption; signal-to-noise ratio;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20020554
