DocumentCode
1136002
Title
1 mW CMOS polyphase channel filter for Bluetooth
Author
Hughes, J.B. ; Spencer, A. ; Worapishet, A. ; Sitdhikorn, R.
Author_Institution
Philips Res. Lab., Redhill, UK
Volume
149
Issue
56
fYear
2002
Firstpage
348
Lastpage
354
Abstract
A polyphase transconductor-capacitor (Gm-C) channel filter for a low-IF Bluetooth transceiver is described. It is designed in a 2.5 V, 0.25 μm standard CMOS process and employs a novel fully differential transconductor. Simulated performance is presented showing good fifth-order bandpass filter response (1 MHz centre frequency, 1.2 MHz bandwidth), 1 dB compression at 1.3 V pk-pk, signal-to-noise ratio of 68.2 dB and an input third-order intermodulation product of 34.2 dBV. The power consumption is 1 mW and estimated chip area is 0.1 mm2.
Keywords
Bluetooth; CMOS integrated circuits; active filters; band-pass filters; transceivers; 0.25 micron; 1 MHz; 1 mW; 1.2 MHz; 2.5 V; CMOS polyphase transconductor-capacitor channel filter; bandpass filter; chip area; fully differential transconductor; input third-order intermodulation product; low-IF Bluetooth transceiver; power consumption; signal-to-noise ratio;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:20020554
Filename
1176585
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