DocumentCode :
1136017
Title :
Submicrosecond submilliwatt silicon-on-insulator thermooptic switch
Author :
Geis, M.W. ; Spector, S.J. ; Williamson, R.C. ; Lyszczarz, T.M.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
Volume :
16
Issue :
11
fYear :
2004
Firstpage :
2514
Lastpage :
2516
Abstract :
Mach-Zehnder interferometer thermooptic switches were made using a thin-silicon-on-insulator material system. The switches use single-mode strip-Si waveguides, 0.26×0.4 μm, operating at 1.5 μm. The waveguides were heated directly by passing current through them, resulting in switching power of 6 mW, and a rise time of 0.6 μs. By heating both arms of the interferometer differentially, so one arm is cooling while the other heating, the switching-signal input power is reduced to <100 μW. In this differential mode, the switching time can be decreased to 50 ns by pulsing the electrical input to 10 mW. Modeling indicates 10-ns-switching time would require /spl sim/23 mW of pulsed power.
Keywords :
Mach-Zehnder interferometers; elemental semiconductors; integrated optics; optical switches; optical waveguides; silicon; silicon-on-insulator; thermo-optical devices; 0.26 mum; 0.4 mum; 0.6 mus; 1.5 mum; 10 mW; 10 ns; 50 ns; 6 mW; Mach-Zehnder interferometer thermooptic switch; Si; silicon-on-insulator; single-mode strip-Si waveguides; switching time; Arm; Heating; Integrated optics; Optical interferometry; Optical polymers; Optical switches; Optical waveguides; Photonic integrated circuits; Silicon on insulator technology; Turning;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2004.835194
Filename :
1344085
Link To Document :
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