Infrared-sensitive InGaAs-on-Si p-i-n photodetectors exhibiting high-power linearity

Author

Pauchard, A. ; Bitter, M. ; Zhong Pan ; Kristjansson, S. ; Hodge, L.A. ; Williams, K.J. ; Tulchinsky, D.A. ; Hummel, S.G. ; Lo, Y.H.

Author_Institution

Nova Crystals, San Jose, CA, USA

Volume

16

Issue

11

fYear

2004

Firstpage

2544

Lastpage

2546

Abstract

We report on the device fabrication and measured performance of p-i-n photodiodes made from wafer-bonded InGaAs-on-Si material. Dark currents below 38 pA and 3-dB bandwidths above 11 GHz were measured for a -4-V bias and for an active area diameter of 20 μm. The thermal conductivity of silicon enables a 200-MHz 1-dB compression current of 76.5 mA, measured on nonoptimized test devices. These devices dissipate upwards of 612 mW of electrical power. High-yield wafer-scale fabrication of InGaAs-on-Si p-i-n photodetectors is demonstrated.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; p-i-n photodiodes; photodetectors; silicon; thermal conductivity; wafer bonding; InGaAs-Si; compression current; dark currents; infrared-sensitive InGaAs-on-Si p-i-n photodetectors; p-i-n photodiodes; thermal conductivity; wafer bonding; Area measurement; Bandwidth; Conducting materials; Current measurement; Dark current; Fabrication; Linearity; PIN photodiodes; Photodetectors; Thermal conductivity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.835215

Filename

1344095