DocumentCode :
1136130
Title :
Bismuth-doped Pb1-x Snx Te diode lasers with low-threshold currents
Author :
Butler, J. ; Harman, Todd
Author_Institution :
Lincoln Lab., Massachusetts Institute of Technology, Mass.
Volume :
5
Issue :
1
fYear :
1969
fDate :
1/1/1969 12:00:00 AM
Firstpage :
50
Lastpage :
51
Abstract :
Diode lasers have been fabricated from Bi-doped Pb1-x Snx Te with 
, which have threshold current densities as low as 1400 A.cm-2at 77°K and 71 A.cm-2at 12°K, whereas diodes fabricated from undoped Pb1-x Snx Te> in this composition range did not exhibit laser action for current densities up to 30 000 A.cm-2at 77°K and had threshold current densities greater than 200 A.cm-2at 12°K. Bi doping also results in a reduction in the annealing times required to form suitable 
junctions from several weeks to a few days. These effects can be tentatively related to an increased electron concentration in the 
-type layer due to the addition of Bi, a donor impurity. A curve of 
versus 
for 
, which agrees with predictions, is presented.
, which have threshold current densities as low as 1400 A.cm-2at 77°K and 71 A.cm-2at 12°K, whereas diodes fabricated from undoped Pb junctions from several weeks to a few days. These effects can be tentatively related to an increased electron concentration in the -type layer due to the addition of Bi, a donor impurity. A curve of versus for , which agrees with predictions, is presented.Keywords :
Annealing; Bismuth; Current density; Diode lasers; Doping; Electrons; P-n junctions; Tellurium; Threshold current; Tin;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1969.1075663
Filename :
1075663
Link To Document :
