Title : 
Transmission-line delay limitations of laser bandwidths
         
        
        
            Author_Institution : 
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
         
        
        
        
        
            fDate : 
6/1/1994 12:00:00 AM
         
        
        
        
            Abstract : 
The paper describes the constraints placed on modulation bandwidths of horizontal cavity semiconductor lasers by the dissipative and dispersive effects due to the transmission of electric signals along a narrow injection stripe. The calculations employ a distributed transmission-line model where the incremental small-signal laser equivalent circuit incorporates the effects of photon-carrier interactions represented in relaxation oscillations. At 150 μm cavity length, such as those feasible in strained quantum-well structures, the bandwidths appear to be limited to approximately 30 GHz even under the most idealised conditions. It is suggested that further improvements in bandwidths will require a judicious design of the laser travelling-wave structure. Vertical cavity laser structures may offer an alternative approach to increasing the bandwidth
         
        
            Keywords : 
laser cavity resonators; laser theory; optical modulation; semiconductor lasers; transmission line theory; 150 mum; 30 GHz; cavity length; dispersive effects; dissipative effects; distributed transmission-line model; electric signals; horizontal cavity semiconductor lasers; incremental small-signal laser equivalent circuit; laser bandwidths; laser travelling-wave structure; modulation bandwidths; narrow injection stripe; photon-carrier interactions; relaxation oscillations; semiconductor lasers; strained quantum-well structures; transmission-line delay limitations; vertical cavity laser structures;
         
        
        
            Journal_Title : 
Optoelectronics, IEE Proceedings -
         
        
        
        
        
            DOI : 
10.1049/ip-opt:19949810