DocumentCode
1136678
Title
Cavity-length dependent thermal characteristics of InGaN blue laser diodes
Author
Ryu, H.Y. ; Ha, K.H.
Author_Institution
Dept. of Phys., Inha Univ., Incheon
Volume
45
Issue
3
fYear
2009
Firstpage
164
Lastpage
165
Abstract
Thermal characteristics of InGaN-based blue laser diodes (LDs) emitting around 450 nm are investigated with varying cavity length of the LDs. Characteristic temperature, junction temperature, and thermal resistance are measured for the cavity length from 650 to 1450 m. It is found that the characteristic temperature increases slowly with cavity length, and the thermal resistance is significantly improved from 30 W to 17 K/W as the cavity length increases length from 650 to 1450 m.
Keywords
III-V semiconductors; gallium compounds; indium compounds; semiconductor lasers; thermal resistance; wide band gap semiconductors; InGaN; blue laser diodes; cavity length; characteristic temperature; junction temperature; size 650 mum to 1450 mum; thermal characteristics; thermal resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20093230
Filename
4770458
Link To Document