DocumentCode :
1136678
Title :
Cavity-length dependent thermal characteristics of InGaN blue laser diodes
Author :
Ryu, H.Y. ; Ha, K.H.
Author_Institution :
Dept. of Phys., Inha Univ., Incheon
Volume :
45
Issue :
3
fYear :
2009
Firstpage :
164
Lastpage :
165
Abstract :
Thermal characteristics of InGaN-based blue laser diodes (LDs) emitting around 450 nm are investigated with varying cavity length of the LDs. Characteristic temperature, junction temperature, and thermal resistance are measured for the cavity length from 650 to 1450 m. It is found that the characteristic temperature increases slowly with cavity length, and the thermal resistance is significantly improved from 30 W to 17 K/W as the cavity length increases length from 650 to 1450 m.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor lasers; thermal resistance; wide band gap semiconductors; InGaN; blue laser diodes; cavity length; characteristic temperature; junction temperature; size 650 mum to 1450 mum; thermal characteristics; thermal resistance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20093230
Filename :
4770458
Link To Document :
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