DocumentCode

1137108

Title

A technique for the preparation of low-threshold room-temperature GaAs laser diode structures

Author

Panish, M. ; Hayashi, Isao ; Sumski, S.

Author_Institution

AT&T Bell Laboratories, Murray Hill, NJ, USA

Volume

5

Issue

4

fYear

1969

fDate

4/1/1969 12:00:00 AM

Firstpage

210

Lastpage

211

Keywords

Cooling; Diode lasers; Epitaxial layers; Furnaces; Gallium arsenide; Lattices; P-n junctions; Substrates; Temperature; Zinc;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1969.1075757

Filename

1075757