Title :
Design and fabrication of 60-Gb/s InP-based monolithic photoreceiver OEICs and modules
Author :
Bach, Heinz-Gunter ; Beling, Andreas ; Mekonnen, G.G. ; Schlaak, Wolfgang
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentechnik Berlin GmbH, Germany
Abstract :
An InP-based photoreceiver comprising a waveguide-integrated photodiode and a traveling-wave amplifier is presented, which allows dc-coupled interfacing to subsequent electronics without a bias-T. Getting rid of the bias-T provides cost savings of the receiver operation and improves the available bandwidth, gain, and gain flatness. The redesigned receiver optoelectronic integrated circuit was fully packaged into a pigtailed module with a coaxial 1.85-mm connector. Its optoelectronic conversion capability for nonreturn-to-zero modulated data rates up to 66 Gb/s is shown.
Keywords :
III-V semiconductors; indium compounds; integrated circuit packaging; integrated optoelectronics; modules; optical receivers; photodiodes; travelling wave amplifiers; 1.85 mm; 60 Gbit/s; InP; InP-based monolithic photoreceiver OEICs; bias-T; dc-coupled interfacing; electronics; fully packaged; gain flatness; modules; nonreturn-to-zero modulated data rates; optical design; optical fabrication; optoelectronic conversion capability; pigtailed module; receiver operation; receiver optoelectronic integrated circuit; traveling-wave amplifier; waveguide-integrated photodiode; Bit rate; Costs; Epitaxial growth; Epitaxial layers; Fabrication; MMICs; Optical amplifiers; Optical waveguides; Optoelectronic devices; Photodiodes;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2002.806713
