DocumentCode
1137145
Title
AlInGaAs 0.8- 
High-Power Semiconductor Lasers With Delta-Doped Resonant Tunneling Quantum Wells
Author
Yasin, Michael ; Samid, Ilan ; Engelman, Zeev ; Fekete, Dan
Author_Institution
Dept. of Phys., Solid State Inst., Haifa, Israel
Volume
41
Issue
9
fYear
2005
Firstpage
1105
Lastpage
1114
Abstract
In this paper, we describe a new structure design for producing low-threshold high-efficiency and high-brightness 0.807- lasers. In this structure, we incorporate a self-discriminating weak optical confinement asymmetrical waveguide, and an active region based on single or double AlInGaAs quantum well (QW) with Te n-type 
-doping. Optimized coupling between the -doping layer and the double QW, along with waveguide and doping profile optimization, yields 
per QW, a far-field angle of 
, and 
close to one.
lasers. In this structure, we incorporate a self-discriminating weak optical confinement asymmetrical waveguide, and an active region based on single or double AlInGaAs quantum well (QW) with Te n-type -doping. Optimized coupling between the -doping layer and the double QW, along with waveguide and doping profile optimization, yields per QW, a far-field angle of , and close to one.Keywords
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; indium compounds; quantum well lasers; resonant tunnelling; semiconductor doping; semiconductor epitaxial layers; waveguide lasers; 0.8 mum; AlInGaAs; AlInGaAs quantum well; asymmetrical waveguide; delta-doped quantum wells; doping profile optimization; high-brightness lasers; high-efficiency lasers; high-power lasers; laser structure design; low-threshold lasers; optical confinement waveguide; optimized coupling; resonant tunneling; self-discriminating waveguide; semiconductor lasers; Fiber lasers; Laser modes; Laser radar; Optical pumping; Optical waveguides; Power lasers; Quantum well lasers; Resonant tunneling devices; Semiconductor lasers; Waveguide lasers; Aluminum alloys; indium alloys; n-type delta doping; quantum-well (QW) lasers; semiconductor lasers; strain;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2005.852791
Filename
1495624
Link To Document