In this paper, we describe a new structure design for producing low-threshold high-efficiency and high-brightness 0.807- 

 lasers. In this structure, we incorporate a self-discriminating weak optical confinement asymmetrical waveguide, and an active region based on single or double AlInGaAs quantum well (QW) with Te n-type 

 -doping. Optimized coupling between the 

 -doping layer and the double QW, along with waveguide and doping profile optimization, yields 

 per QW, a far-field angle of 

 , and 

 close to one.