Consistent noise models for analysis and design of CMOS circuits

Author

Arnaud, Alfredo ; Galup-Montoro, Carlos

Author_Institution

Microelectron. Group, Univ. de la Republica, Montevideo, Uruguay

Volume

51

Issue

10

fYear

2004

Firstpage

1909

Lastpage

1915

Abstract

Simple, physics-based MOSFET noise models, valid over the linear, saturation, and subthreshold operation regions are presented. The consistency of the models representing series-parallel associations of transistors is verified. Simple formulas for hand analysis using the inversion level concept are developed. The proportionality between the flicker noise corner frequency and the transistor transition frequency is proved and experimentally verified under wide bias conditions. Application of the noise models to a low-noise design is shown.

Keywords

1/f noise; CMOS integrated circuits; MOSFET; flicker noise; integrated circuit design; integrated circuit modelling; integrated circuit noise; 1/f noise; CMOS circuit analysis; CMOS circuit design; MOSFET noise models; compact modeling; flicker noise corner frequency; inversion level concept; linear operation regions; low-noise design; saturation operation regions; series-parallel associations; subthreshold operation regions; transistor transition frequency; 1f noise; CMOS technology; Circuit noise; Frequency; Integrated circuit noise; Low-frequency noise; MOSFET circuits; Resistors; Semiconductor device modeling; Thermal resistance; $1/f$ noise; MOSFET; compact modeling; low-noise design; noise;

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2004.835028

Filename

1344215