Title :
Consistent noise models for analysis and design of CMOS circuits
Author :
Arnaud, Alfredo ; Galup-Montoro, Carlos
Author_Institution :
Microelectron. Group, Univ. de la Republica, Montevideo, Uruguay
Abstract :
Simple, physics-based MOSFET noise models, valid over the linear, saturation, and subthreshold operation regions are presented. The consistency of the models representing series-parallel associations of transistors is verified. Simple formulas for hand analysis using the inversion level concept are developed. The proportionality between the flicker noise corner frequency and the transistor transition frequency is proved and experimentally verified under wide bias conditions. Application of the noise models to a low-noise design is shown.
Keywords :
1/f noise; CMOS integrated circuits; MOSFET; flicker noise; integrated circuit design; integrated circuit modelling; integrated circuit noise; 1/f noise; CMOS circuit analysis; CMOS circuit design; MOSFET noise models; compact modeling; flicker noise corner frequency; inversion level concept; linear operation regions; low-noise design; saturation operation regions; series-parallel associations; subthreshold operation regions; transistor transition frequency; 1f noise; CMOS technology; Circuit noise; Frequency; Integrated circuit noise; Low-frequency noise; MOSFET circuits; Resistors; Semiconductor device modeling; Thermal resistance; $1/f$ noise; MOSFET; compact modeling; low-noise design; noise;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2004.835028
