Title :
A new nonlinear model of EMI-induced distortion phenomena in feedback CMOS operational amplifiers
Author_Institution :
Dipt. di Elettronica, Politecnico di Torino, Italy
fDate :
11/1/2002 12:00:00 AM
Abstract :
This paper deals with distortion phenomena induced by radio-frequency interference (RFI) in analog integrated circuits and it concentrates on the effects induced by RFI on the operation of feedback CMOS operational amplifiers (opamps). In particular, the paper describes a new nonlinear model, which makes possible the prediction of upset in the opamp output nominal signal when RFI is superimposed on the input nominal signals. Such a model can be employed when the transistors of the input differential pair are driven by RFI either in strong or weak nonlinear operation. Results of experimental tests performed on a Miller CMOS opamp connected in the voltage follower configuration are presented and compared with model predictions.
Keywords :
CMOS analogue integrated circuits; differential amplifiers; distortion; electromagnetic compatibility; electromagnetic induction; feedback amplifiers; nonlinear network analysis; operational amplifiers; radiofrequency interference; semiconductor device models; EMC; EMI; EMI-induced distortion; Miller CMOS opamp; RFI; analog IC; analog integrated circuits; electromagnetic compatibility; electromagnetic interference; feedback CMOS operational amplifiers; input differential pair transistors; input nominal signals; nonlinear model; opamp output nominal signal; radio-frequency interference; strong nonlinear operation; voltage follower; weak nonlinear operation; Analog integrated circuits; CMOS analog integrated circuits; Feedback; Nonlinear distortion; Operational amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Radiofrequency interference; Semiconductor device modeling;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.2002.804766