• DocumentCode
    1138036
  • Title

    Nonuniform emission characteristics of electron-beam-pumped dislocation-free GaAs lasers

  • Author

    Lavine, J. ; Mozzi, R.

  • Author_Institution
    Raytheon Research Div., Waltham, MA, USA
  • Volume
    5
  • Issue
    8
  • fYear
    1969
  • fDate
    8/1/1969 12:00:00 AM
  • Firstpage
    421
  • Lastpage
    423
  • Abstract
    Filamentary and other nonuniform emission characteristics have been observed from electron-beam-pumped dislocation-free GaAs lasers. X-ray topographs taken before and after bombardment showed relatively few dislocations present in the as-grown material and no dislocation introduced at the power levels used for electron-beam excitation.
  • Keywords
    Conducting materials; Crystallization; Gallium arsenide; Laser excitation; Laser modes; Pump lasers; Semiconductor lasers; Surface topography; Tin; X-ray lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1969.1076278
  • Filename
    1076278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1138036