Title :
Nonuniform emission characteristics of electron-beam-pumped dislocation-free GaAs lasers
Author :
Lavine, J. ; Mozzi, R.
Author_Institution :
Raytheon Research Div., Waltham, MA, USA
fDate :
8/1/1969 12:00:00 AM
Abstract :
Filamentary and other nonuniform emission characteristics have been observed from electron-beam-pumped dislocation-free GaAs lasers. X-ray topographs taken before and after bombardment showed relatively few dislocations present in the as-grown material and no dislocation introduced at the power levels used for electron-beam excitation.
Keywords :
Conducting materials; Crystallization; Gallium arsenide; Laser excitation; Laser modes; Pump lasers; Semiconductor lasers; Surface topography; Tin; X-ray lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1969.1076278
