DocumentCode :
1138067
Title :
Time delays and Q switching in junction lasers: I - Theory
Author :
Ripper, José E.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, NJ, USA
Volume :
5
Issue :
8
fYear :
1969
fDate :
8/1/1969 12:00:00 AM
Firstpage :
391
Lastpage :
395
Abstract :
In previous publications, a double acceptor trapping model was proposed to account for the characteristics of 
switching and stimulated emission time delays in pulsed junction lasers. In this paper, a detailed time-dependent mathematical development of the model is presented including heating effects. The equations so obtained will form the basis for comparison with experimental results in Part II.
switching and stimulated emission time delays in pulsed junction lasers. In this paper, a detailed time-dependent mathematical development of the model is presented including heating effects. The equations so obtained will form the basis for comparison with experimental results in Part II.Keywords :
Charge carrier processes; Delay effects; Diodes; Electron traps; Energy capture; Gallium arsenide; Laser modes; Optical pulses; Stimulated emission; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1969.1076281
Filename :
1076281
Link To Document :
