DocumentCode
1138214
Title
A system architecture solution for unreliable nanoelectronic devices
Author
Han, Jie ; Jonker, Pieter
Author_Institution
Fac. of Appl. Sci., Delft Univ. of Technol., Netherlands
Volume
1
Issue
4
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
201
Lastpage
208
Abstract
The shrinking of electronic devices will inevitably introduce a growing number of defects and even make these devices more sensitive to external influences. It is, therefore, likely that the emerging nanometer-scale devices will eventually suffer from more errors than classical silicon devices in large scale integrated circuits. In order to make systems based on nanometer-scale devices reliable, the design of fault-tolerant architectures will be necessary. Initiated by von Neumann, the NAND multiplexing technique, based on a massive duplication of imperfect devices and randomized imperfect interconnects, had been studied in the past using an extreme high degree of redundancy. In this paper, this NAND multiplexing is extended to a rather low degree of redundancy, and the stochastic Markov nature in the heart of the system is discovered and studied, leading to a comprehensive fault-tolerant theory. A system architecture based on NAND multiplexing is investigated by studying the problem of the random background charges in single electron tunneling (SET) circuits. It might be a system solution for an ultra large integration of highly unreliable nanometer-scale devices.
Keywords
Markov processes; NAND circuits; ULSI; fault tolerance; integrated circuit interconnections; nanoelectronics; redundancy; single electron transistors; NAND multiplexing technique; Si; fault-tolerant architectures; large scale integrated circuits; nanometer-scale devices; randomized imperfect interconnects; redundancy; single electron tunneling circuits; stochastic Markov nature; ultra large integration; unreliable nanoelectronic devices; Electrons; Fault tolerant systems; Heart; Integrated circuit interconnections; Integrated circuit reliability; Large scale integration; Nanoscale devices; Redundancy; Silicon devices; Stochastic systems;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2002.807393
Filename
1176965
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