DocumentCode :
1138326
Title :
Ballistic FET modeling using QDAME: quantum device analysis by modal evaluation
Author :
Laux, Steven E. ; Kumar, Arvind ; Fischetti, Massimo V.
Author_Institution :
T. J. Watson Res. Center, IBM Corp., Yorktown Heights, NY, USA
Volume :
1
Issue :
4
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
255
Lastpage :
259
Abstract :
We present an algorithm for self-consistent solution of the Poisson and Schrodinger equations in two spatial dimensions with open-boundary conditions to permit current flow. The algorithm works by discretely sampling a device´s density of states using standing wave boundary conditions, decomposing the standing waves into traveling waves injected from the contacts to assign occupancies, and iterating the quantum charge with the potential to self-consistency using a novel hybrid Newton-Broyden method. A double-gate FET is simulated as an example, with applications focused on surface roughness and contact geometry.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; convergence of numerical methods; electron density; electronic density of states; interface roughness; semiconductor device models; Poisson equations; QDAME; Schrodinger equations; ballistic FET modeling; contact geometry; convergence; current flow; density of states; double-gate MOSFET; hybrid Newton-Broyden method; modal evaluation; open-boundary conditions; quantum charge; quantum device analysis; self-consistent solution; standing wave boundary conditions; surface roughness; traveling waves; Boundary conditions; Double-gate FETs; Electrons; Geometry; MOSFETs; Particle scattering; Poisson equations; Sampling methods; Schrodinger equation; Solid modeling;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2002.807388
Filename :
1176974
Link To Document :
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