DocumentCode
1138326
Title
Ballistic FET modeling using QDAME: quantum device analysis by modal evaluation
Author
Laux, Steven E. ; Kumar, Arvind ; Fischetti, Massimo V.
Author_Institution
T. J. Watson Res. Center, IBM Corp., Yorktown Heights, NY, USA
Volume
1
Issue
4
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
255
Lastpage
259
Abstract
We present an algorithm for self-consistent solution of the Poisson and Schrodinger equations in two spatial dimensions with open-boundary conditions to permit current flow. The algorithm works by discretely sampling a device´s density of states using standing wave boundary conditions, decomposing the standing waves into traveling waves injected from the contacts to assign occupancies, and iterating the quantum charge with the potential to self-consistency using a novel hybrid Newton-Broyden method. A double-gate FET is simulated as an example, with applications focused on surface roughness and contact geometry.
Keywords
MOSFET; Poisson equation; Schrodinger equation; convergence of numerical methods; electron density; electronic density of states; interface roughness; semiconductor device models; Poisson equations; QDAME; Schrodinger equations; ballistic FET modeling; contact geometry; convergence; current flow; density of states; double-gate MOSFET; hybrid Newton-Broyden method; modal evaluation; open-boundary conditions; quantum charge; quantum device analysis; self-consistent solution; standing wave boundary conditions; surface roughness; traveling waves; Boundary conditions; Double-gate FETs; Electrons; Geometry; MOSFETs; Particle scattering; Poisson equations; Sampling methods; Schrodinger equation; Solid modeling;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2002.807388
Filename
1176974
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