Author :
Merkel, P. ; Azzi, P. ; Bacchetta, N. ; Bisello, D. ; Busetto, G. ; Hara, K. ; Kim, S. ; Manea, C. ; Wang, Z. ; Behari, S. ; Maksimovic, P. ; Benjamin, D. ; Cabrera, S. ; Kruse, M. ; Bolla, G. ; Bortoletto, D. ; Canepa, A. ; Fernandez, J.P. ; Booth, P. ;
Abstract :
The innermost layer (L00) of the Run IIa silicon detector of CDF was planned to be replaced for the high luminosity Tevatron upgrade of Run IIb. This new silicon layer (L0) is designed to be a radiation tolerant replacement for the otherwise very similar L00 from Run IIa. The data are read out via long, fine-pitch, low-mass cables allowing the hybrids with the chips to sit at higher z(∼70 cm), outside of the tracking volume. The design and first results from the prototyping phase are presented. Special focus is placed on the amount and the structure of induced noise as well as signal-to-noise values.
Keywords :
noise; position sensitive particle detectors; readout electronics; silicon radiation detectors; CDF Run IIb silicon detector; chips; high luminosity Tevatron upgrade; innermost layer; long fine-pitch low-mass cables; noise; prototyping phase; radiation tolerant replacement; read out data; signal-to-noise values; silicon layer; silicon strip detector design; tracking volume; Cables; Detectors; Educational institutions; Laboratories; Physics; Prototypes; Silicon; US Department of Energy; USA Councils; CDF Run IIb; noise; performance; silicon strip detector;
