• DocumentCode
    1138725
  • Title

    Super-radiation hard detector technologies: 3-D and widegap detectors

  • Author

    Rahman, M. ; Al-Ajili, A. ; Bates, R. ; Blue, A. ; Cunningham, W. ; Doherty, F. ; Glaser, M. ; Haddad, L. ; Horn, M. ; Melone, J. ; Mikuz, M. ; Quinn, T. ; Roy, P. ; O´Shea, V. ; Smith, K.M. ; Vaitkus, J. ; Wright, V.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Glasgow, UK
  • Volume
    51
  • Issue
    5
  • fYear
    2004
  • Firstpage
    2256
  • Lastpage
    2261
  • Abstract
    The radiation hardness of semiconductor detectors for harsh environments, including nuclear, space, and particle physics, may be enhanced by a number of strategies. We examine the use of materials alternative to silicon, namely silicon carbide and gallium nitride, as well as a nonconventional geometry called "3-D." Fabricated detectors were irradiated to fast hadron fluences of 1014 cm-2 and measurements were made of I--V, C--V and charge collection efficiency before and after irradiation. The performance in each case was found to degrade only slightly, promising highly radiation tolerant operation.
  • Keywords
    radiation hardening; semiconductor counters; wide band gap semiconductors; 3-D detectors; C-V efficiency; GaN; I-V efficiency; SiC; charge collection efficiency; fabricated detectors; fast hadron fluences; gallium nitride; harsh environments; nonconventional geometry; radiation damage; radiation detectors; radiation hardness; semiconductor detectors; silicon carbide; superradiation hard detector technologies; three-dimensional detectors; widegap detectors; Charge measurement; Current measurement; Gallium nitride; Geometry; III-V semiconductor materials; Radiation detectors; Semiconductor materials; Semiconductor radiation detectors; Silicon carbide; Space technology; -D; Gallium nitride; detectors; radiation damage; radiation detectors; silicon carbide; three-dimensional;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2004.835902
  • Filename
    1344319