Characterization of two deep-diffusion avalanche photodiode array prototypes with different optical coatings

Author

Song, Tae Yong ; Mosset, Jean-Baptiste ; Loude, Jean-Françcois ; Choi, Yong ; Morel, Christian

Author_Institution

Dept. of Nucl. Med., Sungkyunkwan Univ. Sch. of Med., Seoul, South Korea

Volume

51

Issue

5

fYear

2004

Firstpage

2279

Lastpage

2283

Abstract

The aim of this paper was to characterize two deep-diffusion avalanche photodiode (APD) arrays for positron emission tomography (PET). Two different prototypes developed by radiation monitoring devices (RMD) were investigated. Quantum efficiency was determined as a function of wavelength in the visible-ultraviolet rays region. Capacitance was determined as a function of bias. Dark current and gain were measured at several fixed temperatures versus bias. Finally, bulk and surface contributions to the dark current were estimated.

Keywords

antireflection coatings; avalanche photodiodes; photocapacitance; positron emission tomography; radiation monitoring; semiconductor counters; PET; bulk contribution; capacitance; dark current; deep-diffusion avalanche photodiode array prototypes; fixed temperatures versus bias; optical coatings; positron emission tomography; quantum efficiency; radiation monitoring devices; semiconductor radiation detectors; surface contributions; visible-ultraviolet rays region; wavelength; Avalanche photodiodes; Coatings; Dark current; Electrical capacitance tomography; Optical arrays; Positron emission tomography; Prototypes; Quantum capacitance; Radiation monitoring; Stimulated emission; Avalanche photodiodes; positron emission tomography; semiconductor radiation detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.832676

Filename

1344323