DocumentCode
1138815
Title
A Precise Cyclic CMOS Time-to-Digital Converter With Low Thermal Sensitivity
Author
Chen, Chun-Chi ; Chen, Poki ; Hwang, Chorng-Sii ; Chang, Wei
Author_Institution
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Volume
52
Issue
4
fYear
2005
Firstpage
834
Lastpage
838
Abstract
In this paper, a precise cyclic CMOS time-to-digital converter (TDC) with low thermal sensitivity is proposed. Through compensation, the thermal sensitivity of the new cyclic time-to-digital converter is reduced dramatically. The proposed TDC not only possesses reduced thermal sensitivity but also has a small chip size. The circuit was fabricated with TSMC 0.35 
m CMOS technology. The size of the circuit is only 0.40 mm by 0.30 mm. The experimental results show that a 
6% resolution variation of the new TDC was achieved over 0 
to 100 temperature range which is much better than the 25% resolution variation of the original uncompensated version. The effective resolution is as fine as 57.3ps/LSB at room temperature with a fluctuation of 3.5 ps over 0 to 100 temperature range, and the corresponding integral nonlinearities are all within 0.8 LSB. The minimum measurement rate is 33 kHz. The measured power consumption is about 3.5 uW.
m CMOS technology. The size of the circuit is only 0.40 mm by 0.30 mm. The experimental results show that a 6% resolution variation of the new TDC was achieved over 0 to 100 temperature range which is much better than the 25% resolution variation of the original uncompensated version. The effective resolution is as fine as 57.3ps/LSB at room temperature with a fluctuation of 3.5 ps over 0 to 100 temperature range, and the corresponding integral nonlinearities are all within 0.8 LSB. The minimum measurement rate is 33 kHz. The measured power consumption is about 3.5 uW.Keywords
CMOS integrated circuits; analogue-digital conversion; power consumption; CMOS technology; circuit fabrication; fluctuation; integral nonlinearities; measured power consumption; room temperature; thermal compensation; thermal sensitivity; time-to-digital converter; CMOS technology; Circuits; Delay lines; Energy consumption; Fluctuations; Instruments; Power measurement; Semiconductor device measurement; Temperature distribution; Temperature sensors; Thermal compensation; thermal sensitivity; time-to-digital converter (TDC);
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2005.852708
Filename
1495771
Link To Document