DocumentCode :
1138863
Title :
Study of N-Channel MOSFETs With an Enclosed-Gate Layout in a 0.18 
m CMOS Technology
m CMOS TechnologyAuthor :
Chen, Li ; Gingrich, Douglas M.
Volume :
52
Issue :
4
fYear :
2005
Firstpage :
861
Lastpage :
867
Abstract :
Enclosed-gate layout MOSFETs with guard rings have been fabricated in a commercial 0.18 m complementary metal–oxide-semiconductor technology. The static, small signal, and noise performance of the MOSFETs were determined before and after being subjected to ionizing radiation. The transistor design could provide the basis for low-noise radiation-tolerant circuits.
m complementary metal–oxide-semiconductor technology. The static, small signal, and noise performance of the MOSFETs were determined before and after being subjected to ionizing radiation. The transistor design could provide the basis for low-noise radiation-tolerant circuits.Keywords :
CMOS integrated circuits; MOSFET; ionisation chambers; CMOS technology; N-channel MOSFET; complementary metal-oxide-semiconductor technology; deep submicrometer; enclosed-gate layout; ionizing radiation; low-noise radiation-tolerant circuits; transistor design; CMOS process; CMOS technology; Geometry; Integrated circuit technology; Ionizing radiation; Leakage current; MOSFETs; Semiconductor device manufacture; Semiconductor device noise; Threshold voltage; Complementary metal–oxide-semiconductor (CMOS); deep submicrometer (DSM); enclosed-gate; radiation; transistor;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2005.852652
Filename :
1495775
Link To Document :
