Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection

Author

Shoji, H. ; Mukai, K. ; Ohtsuka, N. ; Sugawara, M. ; Uchida, T. ; Ishikawa, H.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

7

Issue

12

fYear

1995

Firstpage

1385

Lastpage

1387

Abstract

A laser oscillation from self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots is achieved at 80 K by current injection. Lasing at a three-dimensionally quantum confined sublevel of the In/sub 0.5/Ga/sub 0.5/As quantum dots is clearly demonstrated for the first time by electroluminescence and diamagnetic energy shift measurement. The results predict the possibility of ultra-low threshold current operation of quantum dot lasers.

Keywords

III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; quantum well lasers; self-adjusting systems; 80 K; In/sub 0.5/Ga/sub 0.5/As; In/sub 0.5/Ga/sub 0.5/As quantum dot lasers; current injection; diamagnetic energy shift measurement; electroluminescence; laser oscillation; self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots; three-dimensionally quantum confined sublevel of t; three-dimensionally quantum-confined sublevel; ultra-low threshold current operation; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Potential well; Quantum dot lasers; Quantum dots; Semiconductor lasers; Substrates; Threshold current; US Department of Transportation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.477257

Filename

477257