Title :
A comparison between GaAs and CdTe for X-ray imaging
Author :
Sun, G.C. ; Samic, H. ; Bourgoin, J.C. ; Chambellan, D. ; Gal, O. ; Pillot, Ph.
Author_Institution :
Lab. des Milieux Desordonnes et Heterogenes, Univ. Pierre et Marie Curie, Paris, France
Abstract :
We have grown 4 inch GaAs epitaxial layers of thickness ranging from 100 to 600 μm. With such layers we made pixel X-ray detectors where each pixel is a p+/i/n+ mesa structure in which the grown layer is the i region. The aim of this communication is to describe, prior to the evaluation of an image, the performances of such a detector in terms of homogeneity, reverse dark current, linearity, response time, dynamic range and charge collection efficiency. We shall also describe how the current induced by 100 kV X-rays in a detector made of a 115-μm thick GaAs layer compares with that produced in the same conditions by a 1-mm thick CdTe detector.
Keywords :
X-ray detection; X-ray imaging; epitaxial growth; epitaxial layers; semiconductor counters; 1 mm; 100 kV; 100 to 600 micron; 4 inch; GaAs epitaxial layer thickness; X-ray imaging; charge collection efficiency; detector performance; dynamic range; epitaxial layer growth; homogeneity; image evaluation; induced current; linearity; p+/i/n+ mesa structure; pixel X-ray detector; response time; reverse dark current; thick CdTe detector; Dark current; Delay; Dynamic range; Epitaxial layers; Gallium arsenide; Linearity; Performance evaluation; X-ray detection; X-ray detectors; X-ray imaging; Epitaxy; GaAs; X-ray; imaging;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.834719
