DocumentCode :
1139082
Title :
The low-temperature anodization of silicon in a gaseous plasma
Author :
Barlow, Kenneth J. ; Taylor, Stephen ; Eccleston, William ; Kiermasz, A.
Volume :
36
Issue :
7
fYear :
1989
fDate :
7/1/1989 12:00:00 AM
Firstpage :
1279
Lastpage :
1285
Abstract :
A comprehensive investigation of the low-temperature anodization of silicon in RF and microwave oxygen plasmas is discussed. A comparison of the growth results and ion signals observed, using quadropole mass spectrometry, indicates a strong correlation between the growth rate and the presence of O- ions in the plasma. Characterization of parameters such as pressure, electrode spacing, and current density has allowed wafers up to 4-in. diameter to be anodized with good growth rates (0.3 μm/h) and excellent oxide uniformity, using low temperatures (⩽600°C), low input power densities (~59 W-cm-2), and low current densities (~7 mA-cm-2). Oxide properties such as etch rate and refractive index were found to be indistinguishable from thermally grown oxides. Optimization of anneals and the use of a halogen gas enables plasma oxides with high breakdown fields (10-11 MV/cm), an interface trap density of ~5×1010 cm-2-eV-1 at midgap, and a fixed oxide charge of 6×1010 cm-2 to be fabricated without resorting to high-temperature (⩾600°C) processing
Keywords :
anodisation; elemental semiconductors; mass spectrometer applications; oxidation; silicon; 600 degC; O2; RF plasma; Si; anneals; breakdown fields; current density; electrode spacing; etch rate; growth rate; halogen gas; input power densities; interface trap density; ion signals; low-temperature anodization; microwave oxygen plasmas; pressure; quadropole mass spectrometry; refractive index; Current density; Electrodes; Etching; Mass spectroscopy; Plasma applications; Plasma density; Plasma temperature; Radio frequency; Refractive index; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.30933
Filename :
30933
Link To Document :
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