Forward-bias conduction of Schottky diodes on polysilicon thin films

Author

Verghese, Simon ; Hauser, John R. ; Wortman, Jimmie J. ; Kerns, Sherra E.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

36

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

1311

Lastpage

1317

Abstract

An analysis of forward I-V characteristics for Al Schottky contacts to polycrystalline thin films is presented. Experimental results for lateral structures with various n^- doping levels show the expected twofold exponential characteristics representing a transition from electrode-limited to bulk-limited conduction. At higher doping levels the bulk-limited characteristic is not a perfect exponential. The thermionic emission theory has been modified to include crystallite resistivity between grain boundaries and successfully matches experimental data

Keywords

Schottky-barrier diodes; aluminium; elemental semiconductors; grain boundaries; silicon; Al-Si; Schottky contacts; Schottky diodes; bulk-limited conduction; crystallite resistivity; forward I-V characteristics; forward-bias conduction; grain boundaries; lateral structures; n^- doping levels; polycrystalline thin films; thermionic emission theory; twofold exponential characteristics; Conductivity; Crystallization; Doping; Grain boundaries; Schottky barriers; Schottky diodes; Testing; Thermionic emission; Transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.30937

Filename

30937