Title :
A new VDMOSFET structure with reduced reverse transfer capacitance
Author :
Sakai, Tatsuo ; Murakami, Naoki
Author_Institution :
NTT Applied Electron. Lab., Tokyo, Japan
fDate :
7/1/1989 12:00:00 AM
Abstract :
A VDMOSFET structure with an additional p-region at the surface of the epitaxial layer is proposed. This structure realizes low reverse transfer capacitance without significantly degrading resistance. Reduction of the reverse transfer capacitance results in an improvement of the switching characteristics. The measured rise time is 49% and the fall time is 33% of the conventional VDMOSFET
Keywords :
capacitance; insulated gate field effect transistors; semiconductor epitaxial layers; VDMOSFET structure; epitaxial layer; fall time; p-region; reduced reverse transfer capacitance; rise time; switching characteristics; Capacitance; Degradation; Electrodes; Epitaxial layers; MOSFET circuits; Power MOSFET; Power supplies; Shape; Surface resistance; Switching frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
