DocumentCode
1139211
Title
A new VDMOSFET structure with reduced reverse transfer capacitance
Author
Sakai, Tatsuo ; Murakami, Naoki
Author_Institution
NTT Applied Electron. Lab., Tokyo, Japan
Volume
36
Issue
7
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
1381
Lastpage
1386
Abstract
A VDMOSFET structure with an additional p-region at the surface of the epitaxial layer is proposed. This structure realizes low reverse transfer capacitance without significantly degrading resistance. Reduction of the reverse transfer capacitance results in an improvement of the switching characteristics. The measured rise time is 49% and the fall time is 33% of the conventional VDMOSFET
Keywords
capacitance; insulated gate field effect transistors; semiconductor epitaxial layers; VDMOSFET structure; epitaxial layer; fall time; p-region; reduced reverse transfer capacitance; rise time; switching characteristics; Capacitance; Degradation; Electrodes; Epitaxial layers; MOSFET circuits; Power MOSFET; Power supplies; Shape; Surface resistance; Switching frequency;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.30945
Filename
30945
Link To Document