Enhanced Vertical Extraction Efficiency From a Thin-Film InGaN–GaN Light-Emitting Diode Using a 2-D Photonic Crystal and an Omnidirectional Reflector

Author

Lin, C.H. ; Yen, H.H. ; Lai, C.F. ; Huang, H.W. ; Chao, C.H. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C. ; Leung, K.M.

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

Volume

20

Issue

10

fYear

2008

fDate

5/15/2008 12:00:00 AM

Firstpage

836

Lastpage

838

Abstract

An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO-SiO omnidirectional reflector on the bottom was fabricated. The device was investigated by performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongly modified by the PC to have a significantly narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.

Keywords

III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; photonic crystals; silicon compounds; thin film devices; titanium compounds; 2D photonic crystal; InGaN-GaN; TiO-SiO; electroluminescence measurement; enhanced vertical extraction; omnidirectional reflector; thin-film light-emitting diode; wavelength 433 nm; Chaos; Life members; Light emitting diodes; Microcavities; Optical surface waves; Photonic crystals; Quantum well devices; Semiconductor materials; Transistors; Two dimensional displays; Light-emitting diode (LED); omnidirectional reflector (ODR); photonic crystal (PC);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.921118

Filename

4494584