Title :
A 12-ns low-temperature DRAM
Author :
Henkels, Walter H. ; Lu, Nicky C C ; Hwang, Wei ; Rajeevakumar ; Franch, Robert L. ; Jenkins, Keith A. ; Bucelot, Thomas J. ; Heidel, David F. ; Immediato, Michael J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
8/1/1989 12:00:00 AM
Abstract :
A 12-ns access-time 0.5-Mb CMOS DRAM (dynamic random-access memory) operated at liquid-nitrogen temperatures is discussed. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of soft error rate (SER) at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation
Keywords :
CMOS integrated circuits; integrated circuit testing; integrated memory circuits; low-temperature techniques; random-access storage; 0.5 Mbit; 12 ns; 77 K; CMOS DRAM; access-time; electron beam tester; high speed; low-temperature; noise; power; soft error rate; CMOS technology; Circuit noise; Circuit testing; Costs; Error analysis; Nitrogen; Random access memory; Temperature measurement; Temperature sensors; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
