• DocumentCode
    113931
  • Title

    Energy band gap characteristics of GaP1−xBix calculated using Quantum Dielectric Theory and Valence Band Anticrossing model

  • Author

    Samajdar, D.P. ; Dhar, Sudipta

  • Author_Institution
    Dept. of Electron. & Commun., Heritage Inst. of Technol., Kolkata, India
  • fYear
    2014
  • fDate
    16-17 Jan. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy.
  • Keywords
    III-V semiconductors; energy gap; gallium compounds; phosphorus compounds; valence bands; wide band gap semiconductors; GaP1-xBix; QDT; VBAC interaction; band structure; energy band gap characteristics; mathematical models; quantum dielectric theory; ternary alloy; valence band anticrossing interaction; Bismuth; Lattices; Photonic band gap; Direct energy gap; band offset; covalent radius; light hole/heavy hole; spin-orbit splitting energy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Communication and Instrumentation (ICECI), 2014 International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4799-3982-4
  • Type

    conf

  • DOI
    10.1109/ICECI.2014.6767363
  • Filename
    6767363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=113931