BILOW-simulation of low-temperature bipolar device behavior

Author

Chrzanowska-Jeske, Malgorzata ; Jaeger, Richard C.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

Volume

36

Issue

8

fYear

1989

fDate

8/1/1989 12:00:00 AM

Firstpage

1475

Lastpage

1488

Abstract

The BILOW simulation program for investigating bipolar transistor behavior in the temperature range 77-300 K is discussed. Differences between the numerical approaches required for simulation of low-temperature behavior compared to room-temperature simulation are presented. Efficient numerical models for the physical parameters in the carrier transport equations and Poisson´s equation for the temperature range of 77-300 K, including a new highly accurate numerical model for the temperature and doping concentration dependence of carrier mobility, are discussed. A temperature- and doping-concentration-dependent model for apparent bandgap narrowing is also discussed. The internal characteristics of a typical bipolar transistor are simulated over the 300-77 K range. The behavior of current gain β and the unity gain frequency f_T versus collector current density for different temperatures are calculated and discussed

Keywords

bipolar transistors; carrier mobility; electronic engineering computing; numerical methods; semiconductor device models; 77 to 300 K; BILOW simulation program; Poisson´s equation; bandgap narrowing; bipolar transistor; carrier mobility; carrier transport equations; collector current density; current gain; internal characteristics; low-temperature bipolar device behavior; numerical approaches; numerical models; unity gain frequency; Bipolar transistors; Current density; Doping; Frequency; Numerical models; Photonic band gap; Poisson equations; Semiconductor process modeling; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.30961

Filename

30961