• DocumentCode
    1139382
  • Title

    A Study of the SEU Performance of InP and SiGe Shift Registers

  • Author

    Hansen, D.L. ; Marshall, P.W. ; Lopez-Aguado, R. ; Jobe, K. ; Carts, M.A. ; Marshall, C.J. ; Chu, P. ; Meyer, S.F.

  • Author_Institution
    Boeing Satellite Syst., Los Angeles, CA, USA
  • Volume
    52
  • Issue
    4
  • fYear
    2005
  • Firstpage
    1140
  • Lastpage
    1147
  • Abstract
    Shift registers fabricated using InP and SiGe technology are tested for SEU performance when irradiated with protons and heavy ions. The results are compared to several different models which predict proton cross section from heavy-ion data.
  • Keywords
    Ge-Si alloys; indium compounds; ion beam effects; proton effects; semiconductor device models; shift registers; InP; InP shift registers; SEU performance; SiGe; SiGe shift registers; heavy ion irradiations; proton irradiation; single event upsets; Circuit testing; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Microelectronics; Protons; Satellites; Shift registers; Silicon germanium; Single event upset; Heavy ion; indium phosphide; proton; silicon germanium; single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.850490
  • Filename
    1495819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1139382