Title :
Criterion for SEU Occurrence in SRAM Deduced From Circuit and Device Simulations in Case of Neutron-Induced SER
Author :
Mérelle, T. ; Chabane, H. ; Palau, J.-M. ; Castellani-Coulié, K. ; Wrobel, F. ; Saigné, F. ; Sagnes, B. ; Boch, J. ; Vaille, J.R. ; Gasiot, G. ; Roche, P. ; Palau, M.C. ; Carrière, T.
Author_Institution :
Univ. de Montpellier II, France
Abstract :
A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the ion-induced parasitic pulse. This criterion can be obtained by both three-dimensional device and SPICE simulations. Using this criterion, the simulated and experimental SER on 130 and 250 nm technologies are shown to be in good agreement.
Keywords :
SPICE; SRAM chips; neutron effects; semiconductor device models; 130 nm technology; 250 nm technology; SEU occurrence simulation; SPICE simulations; SRAM; device simulations; ion-induced parasitic pulse; neutron-induced SER; Circuit simulation; Computer aided software engineering; Helium; Neutrons; Particle tracking; Protons; Random access memory; SPICE; Space vector pulse width modulation; Target tracking;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.852319
